VS-HFA120FA120P Vishay, VS-HFA120FA120P Datasheet - Page 4

• Manufacturer Part Number: VS-HFA120FA120P
• Description: TRANSISTOR,IGBT,1200V,120A,SOT227
• Manufacturer: Vishay

Specifications of VS-HFA120FA120P

• Transistor Type: SOT-227
• Power Dissipation Max: 337W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-227
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HFA120FA120P
Vishay Semiconductors
Note
(1)
www.vishay.com
4
94608_06
Formula used: T
Pd = Forward power loss = I
Pd
REV
300
250
200
150
100
50
Fig. 6 - Typical Reverse Recovery Time vs. dI
= Inverse power loss = V
100
T
J
C
= 25 °C
= T
J
- (Pd + Pd
dI
T
F
[e-mail], [e-mail],
J
/dt (A/µs)
= 125 °C
For technical questions within your region, please contact one of the following:
F(AV)
R1
x V
REV
x I
94608_08
FM
) x R
R
(1 - D); I
at (I
Ultrafast Soft Recovery Diode, 120 A
I
V
thJC
F
40
30
20
10
R
= 50 A
0
F(AV)
= 200 V
100
Fig. 8 - Typical Peak Recovery Current vs. dI
;
R
/D) (see fig. 5);
I
V
F
at V
R
= 50 A
1000
= 200 V
F
R1
/dt
= Rated V
HEXFRED
dI
F
/dt (A/µs)
T
T
R
J
J
= 125 °C
= 25 °C
94608_07
®
3000
2500
2000
1500
1000
500
0
100
[e-mail]
I
V
Fig. 7 - Typical Stored Charge vs. dI
F
R
= 50 A
1000
= 200 V
F
/dt
T
dI
J
= 125 °C
F
/dt (A/µs)
T
J
= 25 °C
Document Number: 94608
Revision: 22-Jul-10
F
/dt
1000