VS-HFA120FA120P Vishay, VS-HFA120FA120P Datasheet - Page 2

TRANSISTOR,IGBT,1200V,120A,SOT227

VS-HFA120FA120P

Manufacturer Part Number
VS-HFA120FA120P
Description
TRANSISTOR,IGBT,1200V,120A,SOT227
Manufacturer
Vishay
Datasheet

Specifications of VS-HFA120FA120P

Transistor Type
SOT-227
Power Dissipation Max
337W
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-227
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HFA120FA120P
Vishay Semiconductors
www.vishay.com
2
DYNAMIC RECOVERY CHARACTERISTICS (T
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to heatsink
Weight
Mounting torque
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
SYMBOL
I
RRM
Q
t
rr
rr
Ultrafast Soft Recovery Diode, 120 A
SYMBOL
T
T
T
T
T
T
J
J
J
J
J
J
R
R
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
thCS
thJC
TEST CONDITIONS
HEXFRED
Flat, greased and surface
J
= 25 °C unless otherwise specified)
TEST CONDITIONS
I
dI
V
F
R
F
= 50 A
/dt = - 200 A/μs
= 200 V
®
DiodesEurope@vishay.com
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
1920
0.05
145
218
910
1.3
30
13
18
-
-
Document Number: 94608
MAX.
0.185
MAX.
Revision: 22-Jul-10
0.37
-
-
-
-
-
-
-
-
-
UNITS
UNITS
°C/W
Nm
nC
ns
A
g

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