BLF878 NXP Semiconductors, BLF878 Datasheet - Page 6

• Manufacturer Part Number: BLF878
• Description: LDMOS,RF,300W,UHF,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF878

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 89V
• Continuous Drain Current Id: 7.6A
• Operating Frequency Range: 1.3GHz
• Rf Transistor Case: SOT-979A
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF878_2
Product data sheet
Fig 3.
(dB)
G
(1) V
(2) V
p
22
20
18
16
0
I
860 MHz test circuit.
2-Tone power gain and drain efficiency as
functions of average load power; typical
values
Dq
DS
DS
= 1.4 A; measured in a common source narrowband
= 40 V
= 42 V
7.1.2 2-Tone
G
D
p
100
(2)
(1)
200
(1)
(2)
300
P
L(AV)
001aai077
(W)
400
Rev. 02 — 15 June 2009
60
40
20
0
(%)
D
Fig 4.
IMD3
(dBc)
(1) V
(2) V
10
20
30
40
50
0
I
860 MHz test circuit.
2-Tone third order intermodulation distortion
as a function of average load power; typical
values
Dq
DS
DS
= 1.4 A; measured in a common source narrowband
= 40 V
= 42 V
100
(1)
(2)
UHF power LDMOS transistor
200
300
© NXP B.V. 2009. All rights reserved.
P
L(AV)
BLF878
001aai078
(W)
400
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