BLF878 NXP Semiconductors, BLF878 Datasheet - Page 4

• Manufacturer Part Number: BLF878
• Description: LDMOS,RF,300W,UHF,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF878

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 89V
• Continuous Drain Current Id: 7.6A
• Operating Frequency Range: 1.3GHz
• Rf Transistor Case: SOT-979A
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
7. Application information
BLF878_2
Product data sheet
Table 7.
T
[1]
[2]
Mode of operation
2-Tone, class AB
DVB-T (8k OFDM)
case
Fig 1.
I
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
Dq
= 25 C unless otherwise specified.
= 1.4 A for total device.
V
Output capacitance as a function of drain-source voltage; typical values per
section; capacitance value without internal matching
GS
RF performance in a common-source narrowband 860 MHz test circuit
= 0 V; f = 1 MHz.
f
(MHz)
f
858
C
(pF)
1
oss
350
250
150
= 860; f
Rev. 02 — 15 June 2009
50
0
2
= 860.1
20
V
(V)
40
40
DS
I
(A)
1.4
1.4
Dq
[1]
[1]
40
P
(W)
300
-
V
L(PEP)
DS
001aai075
(V)
UHF power LDMOS transistor
P
(W)
-
75
60
L(AV)
G
(dB) (%)
> 18 > 42 < 31
> 18 > 29 < 29
p
© NXP B.V. 2009. All rights reserved.
BLF878
D
IMD3
(dBc)
4 of 18
[2]