BLF574 NXP Semiconductors, BLF574 Datasheet - Page 6

• Manufacturer Part Number: BLF574
• Description: LDMOS,RF,500W,HF-500MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF574

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 110V
• Continuous Drain Current Id: 56A
• Operating Frequency Range: 225MHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF574_2
Product data sheet
Fig 5.
(dB)
G
p
30
28
26
24
22
0
V
f
Power gain and drain efficiency as functions of
peak envelope load power; typical values
2
DS
= 225.05 MHz.
= 50 V; I
7.1.2 2-Tone CW
200
Dq
= 1000 mA; f
Fig 4.
400
(1) P
V
Load power as function of source power; typical values
1
DS
L(1dB)
= 224.95 MHz;
= 50 V; I
600
P
= 57.32 dBm (540 W)
L(PEP)
G
D
001aaj130
p
Dq
(W)
(dBm)
Rev. 02 — 24 February 2009
P
= 1000 mA; f = 225 MHz.
800
L
60
58
56
54
52
50
80
60
40
20
0
24
(%)
D
26
Fig 6.
IMD3
(dBc)
(1) I
(2) I
(3) I
(4) I
(5) I
28
20
40
60
80
0
0
V
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
Dq
Dq
Dq
Dq
Dq
DS
Ideal P
= 600 mA
= 800 mA
= 1000 mA
= 1200 mA
= 1400 mA
= 50 V; f
30
L
P
200
L
HF / VHF power LDMOS transistor
1
= 224.95 MHz; f
32
(1)
P
001aaj129
s
(dBm)
(1)
(2)
(3)
(4)
(5)
400
34
2
= 225.05 MHz.
600
P
© NXP B.V. 2009. All rights reserved.
L(PEP)
BLF574
001aaj131
(W)
800
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