BLF574 NXP Semiconductors, BLF574 Datasheet - Page 3

• Manufacturer Part Number: BLF574
• Description: LDMOS,RF,500W,HF-500MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF574

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 110V
• Continuous Drain Current Id: 56A
• Operating Frequency Range: 225MHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
6. Characteristics
BLF574_2
Product data sheet
Table 6.
T
Table 7.
Mode of operation: CW; f = 225 MHz; RF performance at V
T
Symbol Parameter
V
V
V
I
I
I
g
R
C
C
C
Symbol Parameter
G
RL
DSS
DSX
GSS
j
case
fs
D
(BR)DSS
GS(th)
GSq
DS(on)
rs
iss
oss
p
= 25 C; per section unless otherwise specified.
in
= 25 C; unless otherwise specified; in a class-AB production test circuit.
power gain
input return loss
drain efficiency
drain-source breakdown voltage V
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
feedback capacitance
input capacitance
output capacitance
DC characteristics
RF characteristics
Rev. 02 — 24 February 2009
Conditions
V
V
V
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
Conditions
P
P
P
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
GS
GS
L
L
L
= 8.33 A
= 400 W
= 400 W
= 400 W
= 10 V; I
= 50 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GS(th)
GS(th)
D
DS
DS
DS
DS
D
D
D
= 2.5 mA
+ 3.75 V;
+ 3.75 V;
DS
DS
HF / VHF power LDMOS transistor
= 250 mA
= 500 mA
= 12.5 A
= 50 V
= 50 V;
= 50 V;
= 50 V;
= 50 V; I
= 0 V
Dq
= 1000 mA for total device;
Min Typ Max Unit
110 -
1.25 1.7
1.35 1.85 2.35 V
-
29
-
-
-
-
-
-
Min Typ Max Unit
25
13
66
© NXP B.V. 2009. All rights reserved.
BLF574
-
37.5 -
-
17
0.14 -
1.5
204 -
72
26.5 28
20
70
-
2.25 V
2.8
280 nA
-
-
-
-
-
3 of 18
V
A
S
pF
pF
pF
dB
dB
%
A