PBSS4021SPN NXP Semiconductors, PBSS4021SPN Datasheet - Page 12

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PBSS4021SPN

Manufacturer Part Number
PBSS4021SPN
Description
TRANSISTOR,NPN/PNP,20V,SO8
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4021SPN

Module Configuration
Dual
Transistor Polarity
NPN / PNP
Collector Emitter Voltage V(br)ceo
20V
Dc Collector Current
7.5A
Transistor Case Style
SOIC
No. Of Pins
8
Svhc
No SVHC (18-Jun-201
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
PBSS4021SPN
Product data sheet
Fig 17. TR2 (PNP): Collector-emitter saturation
Fig 19. TR2 (PNP): Collector-emitter saturation
V
R
−10
−10
−10
(V)
(Ω)
CEsat
CEsat
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
10
10
10
10
−1
10
−1
−2
−3
−1
−2
−10
−10
1
3
2
I
voltage as a function of collector current;
typical values
I
resistance as a function of collector current;
typical values
C
C
−1
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
−1
−1
−10
−10
−10
−10
2
2
−10
−10
(1)
(2)
(3)
3
3
(1)
(2)
(3)
All information provided in this document is subject to legal disclaimers.
−10
−10
006aac274
006aac276
I
I
4
C
4
C
(mA)
(mA)
−10
−10
Rev. 2 — 13 October 2010
5
5
Fig 18. TR2 (PNP): Collector-emitter saturation
Fig 20. TR2 (PNP): Collector-emitter saturation
V
R
−10
−10
−10
(V)
(Ω)
CEsat
CEsat
(1) I
(2) I
(3) I
(1) I
(2) I
(3) I
10
10
10
10
−1
10
−1
−2
−3
−1
−2
−10
−10
1
3
2
T
voltage as a function of collector current;
typical values
T
resistance as a function of collector current;
typical values
C
C
C
C
C
C
−1
amb
−1
amb
20 V NPN/PNP low V
/I
/I
/I
/I
/I
/I
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
−1
−1
−10
−10
(1)
(2)
(3)
(1)
(2)
(3)
PBSS4021SPN
−10
−10
2
2
−10
−10
CEsat
3
3
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
−10
−10
006aac275
006aac277
I
I
4
4
C
C
(mA)
(mA)
−10
−10
5
5
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