PBSS4021SPN NXP Semiconductors, PBSS4021SPN Datasheet - Page 11

• Manufacturer Part Number: PBSS4021SPN
• Description: TRANSISTOR,NPN/PNP,20V,SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4021SPN

• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 20V
• Dc Collector Current: 7.5A
• Transistor Case Style: SOIC
• No. Of Pins: 8
• Svhc: No SVHC (18-Jun-201
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PBSS4021SPN
Product data sheet
Fig 13. TR2 (PNP): DC current gain as a function of
Fig 15. TR2 (PNP): Base-emitter voltage as a function
h
V
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
−1.4
BE
−1.0
−0.6
−0.2
600
400
200
−10
−10
0
V
collector current; typical values
V
of collector current; typical values
−1
−1
amb
amb
amb
amb
amb
amb
CE
CE
= −2 V
= −2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
−10
−10
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
2
2
−10
−10
3
3
All information provided in this document is subject to legal disclaimers.
−10
−10
006aac270
006aac272
I
I
4
C
4
C
(mA)
(mA)
−10
−10
Rev. 2 — 13 October 2010
5
5
Fig 14. TR2 (PNP): Collector current as a function of
Fig 16. TR2 (PNP): Base-emitter saturation voltage as
V
(V)
−16.0
(A)
−12.0
BEsat
I
(1) T
(2) T
(3) T
C
−8.0
−4.0
−1.4
−1.0
−0.6
−0.2
0.0
−10
0.0
T
collector-emitter voltage; typical values
I
a function of collector current; typical values
C
amb
−1
amb
amb
amb
20 V NPN/PNP low V
/I
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1.0
−10
−2.0
(1)
(2)
(3)
PBSS4021SPN
I
B
−10
(mA) = −200
2
−3.0
−10
−160
−120
CEsat
−80
−40
3
−4.0
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
−10
−180
−140
−100
−60
−20
006aac271
006aac273
V
I
4
CE
C
(mA)
(V)
−10
−5.0
5
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