PBSS4021SP NXP Semiconductors, PBSS4021SP Datasheet - Page 5

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PBSS4021SP

Manufacturer Part Number
PBSS4021SP
Description
TRANSISTOR,PNP/PNP,20V,SO8
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4021SP

Module Configuration
Dual
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-20V
Dc Collector Current
-6.3A
Transistor Case Style
SOIC
No. Of Pins
8
Svhc
No SVHC (18-Jun-2010)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
PBSS4021SP
Product data sheet
Fig 3.
Fig 4.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
−1
−1
1
1
10
10
3
2
2
FR4 PCB, mounting pad for collector 1 cm
typical values
Ceramic PCB, Al
typical values
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
−5
−5
0
0
0.33
0.1
0.02
0.1
duty cycle = 1
0.75
duty cycle = 1
0.75
0.33
0.02
0.05
0.01
0.05
0.01
10
10
0.5
0.2
0.5
0.2
−4
−4
2
O
3
, standard footprint
10
10
−3
−3
All information provided in this document is subject to legal disclaimers.
10
10
2
−2
−2
Rev. 2 — 11 October 2010
10
10
−1
−1
20 V, 6.3 A PNP/PNP low V
1
1
10
10
PBSS4021SP
CEsat
10
10
2
2
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
t
t
p
p
006aac248
006aac249
(s)
(s)
10
10
3
3
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