PBSS4021SP NXP Semiconductors, PBSS4021SP Datasheet

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PBSS4021SP

Manufacturer Part Number
PBSS4021SP
Description
TRANSISTOR,PNP/PNP,20V,SO8
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4021SP

Module Configuration
Dual
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-20V
Dc Collector Current
-6.3A
Transistor Case Style
SOIC
No. Of Pins
8
Svhc
No SVHC (18-Jun-2010)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PNP/PNP low V
medium power Surface-Mounted Device (SMD) plastic package.
Table 1.
Table 2.
[1]
Type number
PBSS4021SP
Symbol Parameter
V
I
I
R
C
CM
CEO
CEsat
PBSS4021SP
20 V, 6.3 A PNP/PNP low V
Rev. 2 — 11 October 2010
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
Pulse test: t
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Product overview
Quick reference data
p
≤ 300 μs; δ ≤ 0.02.
CEsat
Package
NXP
SOT96-1
Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
FE
open base
single pulse;
) at high I
Conditions
t
I
p
C
C
Name
SO8
≤ 1 ms
= −5 A; I
and I
CEsat
CM
C
B
CEsat
= −0.5 A
(BISS) transistor
NPN/NPN
complement
PBSS4021SN
[1]
Min
-
-
-
-
Typ
-
-
36
-
Product data sheet
NPN/PNP
complement
PBSS4021SPN
Max
−20
−6.3
−15
54
Unit
V
A
A

Related parts for PBSS4021SP

PBSS4021SP Summary of contents

Page 1

... A; I collector-emitter I C saturation resistance ≤ 300 μs; δ ≤ 0.02. p (BISS) transistor CEsat Product data sheet NPN/NPN complement PBSS4021SN CEsat CM C Min Typ - - - - - - = −0 NPN/PNP complement PBSS4021SPN Max Unit −20 V −6.3 A − mΩ ...

Page 2

... T amb All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 October 2010 PBSS4021SP (BISS) transistor CEsat Simplified outline Graphic symbol Marking code 4021SP Min Max − ...

Page 3

... P tot (1) (W) 2.0 (2) 1.0 (3) 0.0 −75 − standard footprint 2 3 Per device: Power derating curves All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 October 2010 PBSS4021SP CEsat Min ≤ 25 °C [1] - [ −55 −65 006aac246 25 75 125 175 T (°C) ...

Page 4

... O , standard footprint −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 October 2010 PBSS4021SP CEsat Conditions Min Typ [1] in free air - - [ [ [1] ...

Page 5

... PBSS4021SP Product data sheet 20 V, 6.3 A PNP/PNP low V −3 −2 − −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 October 2010 PBSS4021SP (BISS) transistor CEsat 006aac248 (s) p 006aac249 (s) p © NXP B.V. 2010. All rights reserved. ...

Page 6

... V; I transition frequency 100 MHz = − collector capacitance MHz ≤ 300 μs; δ ≤ 0.02. p All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 October 2010 PBSS4021SP CEsat Min Typ = ...

Page 7

... V BEsat (V) −10 3 −10 4 − (mA) C (1) T (2) T (3) T Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 October 2010 PBSS4021SP CEsat (mA) = −200 I B −160 −120 −80 −8.0 −40 −4.0 0.0 −1.0 −2.0 −3.0 0 °C T amb Collector current as a function of collector-emitter voltage ...

Page 8

... Fig 10. Collector-emitter saturation voltage as a 006aac256 R CEsat (Ω) (1) (2) (3) −10 −10 − (mA) C Fig 12. Collector-emitter saturation resistance as a All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 October 2010 PBSS4021SP CEsat −1 −1 (1) (2) −2 (3) −3 −1 −10 −1 −10 −10 − °C T amb ...

Page 9

... Product data sheet 20 V, 6.3 A PNP/PNP low (probe) oscilloscope 450 Ω −12 − −0. Bon All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 October 2010 PBSS4021SP CEsat − I (100 %) Bon − I Boff off (probe) o oscilloscope 450 Ω DUT mgd624 = 0 ...

Page 10

... Dimensions in mm Packing methods Package Description SOT96 pitch tape and reel All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 October 2010 PBSS4021SP (BISS) transistor CEsat 1.75 1.0 0.4 0.49 0.25 0.36 0.19 03-02-18 [1] Packing quantity ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 October 2010 PBSS4021SP (BISS) transistor CEsat 1.30 4.00 6.60 7.00 1.27 (6×) Dimensions in mm enlarged solder land 1 ...

Page 12

... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date PBSS4021SP v.2 20101011 • Modifications: Figure 1 “Per device: Power derating PBSS4021SP v.1 20100714 PBSS4021SP Product data sheet 20 V, 6.3 A PNP/PNP low V Data sheet status Product data sheet curves”: updated. Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — ...

Page 13

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 October 2010 PBSS4021SP (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved ...

Page 14

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 October 2010 PBSS4021SP (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved ...

Page 15

... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com (BISS) transistor CEsat All rights reserved. Date of release: 11 October 2010 Document identifier: PBSS4021SP ...

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