P0102BL STMicroelectronics, P0102BL Datasheet - Page 5

• Manufacturer Part Number: P0102BL
• Description: SCR THYRISTOR, 170mA, 200V, SOT-23
• Manufacturer: STMicroelectronics

Specifications of P0102BL

• Peak Repetitive Off-state Voltage, Vdrm: 200V
• Gate Trigger Current Max, Igt: 0.2mA
• Current It Av: 170mA
• On State Rms Current It(rms): 250mA
• Peak Non Rep Surge Current Itsm 50hz: 6A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

P010xx
Figure 5.
Figure 7.
Figure 9.
10.0
6
5
4
3
2
1
0
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.0
0.1
-40
I
GT H L
0
dV/dt[R
,I ,I [T ] /
I
0
T(AV)
R
GK
I
-20
H
& I
= 1k
0.2
= 180°
L
Typical values
(A)
j
GK
Average and DC on-state current
vs. case temperature P010xxL
Relative variation of gate trigger,
holding, and latching currents
vs. junction temperature
Relative variation of dV/dt immunity
vs. gate-cathode resistance
0.4
] / dV/dt[
I
I
0
GT H L
25
GT
T (°C)
,I ,I [T =25°C]
j
0.6
20
D.C.
R
j
GK
0.8
50
40
=1k ]
R
T
GK
case
1.0
(k )
60
(°C)
1.2
75
80
1.4
Typical values
100
1.6
100
V = 0.67 x V
D
T
j
= 125°C
120
1.8
DRM
2.0
125
140
Figure 6.
Figure 8.
Figure 10. Relative variation of dV/dt immunity
10
20
18
16
14
12
10
1.00
0.10
0.01
8
6
4
2
0
8
6
4
0
2
1E-2
0
dV/dt[C
I [R
1E-2
H
K=[Z
V = 0.67 x V
D
GK
R
T
j
GK
= 125°C
= 1k
th(j-a)
] / I [
GK
1
DRM
Relative variation of thermal
impedance junction to ambient
vs. pulse duration
Relative variation of holding
current vs. gate-cathode resistance
H
vs. gate-cathode capacitance
] / dV/dt[
SOT23-3L
/R
1E-1
R
GK
th(j-a)
=1k ]
2
1E-1
SOT-223
R
]
GK
Typical values
=1k ]
1E+0
R
3
C
GK
GK
t (s)
TO-92
p
(k )
(nF)
4
Typical values
1E+1
1E+0
Characteristics
5
1E+2
6
T
j
= 25°C
5E+2
1E+1
5/11
7