IRFB18N50K Vishay, IRFB18N50K Datasheet - Page 5

• Manufacturer Part Number: IRFB18N50K
• Description: N CHANNEL MOSFET, 500V, 17A, TO-220
• Manufacturer: Vishay

Specifications of IRFB18N50K

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2830pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFB18N50K

Document Number: 91100
S09-0015-Rev. A, 19-Jan-09
Fig. 9 - Maximum Drain Current vs. Case Temperature
20
15
10
5
0
0.001
25
Fig. 12a - Unclamped Inductive Test Circuit
0.01
0.1
0.00001
1
R
20 V
G
V
D = 0.50
DS
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
t
p
C
I
AS
D.U.T.
0.01 Ω
75
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
15 V
Driver
125
°
+
- V
t , Rectangular Pulse Duration (sec)
1
A
DD
150
0.001
0.01
IRFB18N50K, SiHFB18N50K
Fig. 12b - Unclamped Inductive Waveforms
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
1. Duty factor D =t / t
2. Peak T = P
I
Notes:
V
V
AS
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
J
GS
t
d(on)
V
DM
DS
t
x Z
r
1
0.1
thJC
t
P
2
p
DM
+ T
D.U.T.
C
t
1
Vishay Siliconix
R
D
t
t
d(off)
2
V
DS
t
f
+
-
www.vishay.com
V
DD
1
5