IRFB18N50K Vishay, IRFB18N50K Datasheet - Page 3

• Manufacturer Part Number: IRFB18N50K
• Description: N CHANNEL MOSFET, 500V, 17A, TO-220
• Manufacturer: Vishay

Specifications of IRFB18N50K

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2830pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFB18N50K

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91100
S09-0015-Rev. A, 19-Jan-09
0.001
0.01
100
0.01
0.1
100
10
0.1
10
1
1
0.1
0.1
TOP
BOTTOM 5.0V
TOP
BOTTOM 5.0V
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
V DS , Drain-to-Source Voltage (V)
VGS
V DS , Drain-to-Source Voltage (V)
12V
10V
8.0V
7.0V
6.0V
5.5V
12V
10V
8.0V
7.0V
6.0V
5.5V
15V
15V
VGS
1
1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
5.0V
10
10
5.0V
100
100
100.00
10.00
IRFB18N50K, SiHFB18N50K
1.00
0.10
0.01
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 4 - Normalized On-Resistance vs. Temperature
5.0
-60 -40 -20
I =
D
Fig. 3 - Typical Transfer Characteristics
T J = 150°C
17A
T , Junction Temperature ( C)
V GS , Gate-to-Source Voltage (V)
6.0
J
T J = 25°C
0
20 40 60 80 100 120 140 160
7.0
V DS = 100V
20µs PULSE WIDTH
Vishay Siliconix
8.0
V
GS
9.0
www.vishay.com
°
=
10V
10.0
3