IRFB18N50K Vishay, IRFB18N50K Datasheet - Page 2

• Manufacturer Part Number: IRFB18N50K
• Description: N CHANNEL MOSFET, 500V, 17A, TO-220
• Manufacturer: Vishay

Specifications of IRFB18N50K

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2830pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFB18N50K

IRFB18N50K, SiHFB18N50K
Vishay Siliconix
Note
a. R
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Maximum Junction-to-Case (Drain)
th
oss
Temperature Coefficient
is measured at T
eff. is a fixed capacitance that givs the same charging time as C
J
approximately 90 °C.
J
a
a
= 25 °C, unless otherwise noted
a
SYMBOL
SYMBOL
ΔV
C
R
V
oss
t
t
R
I
I
C
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
t
DS
SM
I
t
t
on
thCS
DS
oss
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
T
V
V
GS
GS
J
GS
DS
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
= 10 V
= 10 V
J
= 0 V
= 400 V, V
= 25 °C, I
V
V
oss
V
f = 1.0 MHz, see fig. 5
V
TYP.
TEST CONDITIONS
0.50
DS
DS
GS
DS
-
-
while V
= 500 V, V
= V
F
= 0 V, I
V
= 50 V, I
V
V
= 17 A, dI/dt = 100 A/µs
GS
V
DS
V
S
GS
GS
R
I
V
GS
DS
D
DS
= 17 A, V
= ± 30 V
DD
G
V
, I
= 25 V,
DS
= 17 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
DS
= 7.5 Ω, see fig. 10
= 400 V, f = 1.0 MHz
D
= 1.0 V, f = 1.0 MHz
D
= 250 V, I
is rising from 0 to 80 % V
= 250 µA
D
= 250 µA
= 0 V to 400 V
I
GS
D
= 10 A
= 10 A
D
= 0 V
GS
= 1 mA
J
DS
G
= 125 °C
= 0 V
D
= 400 V,
b
= 17 A,
b
MAX.
b
0.56
D
S
c
58
-
b
b
MIN.
500
3.0
6.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
.
S09-0015-Rev. A, 19-Jan-09
Document Number: 91100
TYP.
2830
3310
0.59
0.26
330
155
520
5.3
38
93
22
60
45
30
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.29
S
250
120
780
5.0
1.5
8.0
50
34
54
17
68
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
µC
pF
ns
ns
V
V
Ω
S
A
V