IRF820A Vishay, IRF820A Datasheet - Page 6

• Manufacturer Part Number: IRF820A
• Description: N CHANNEL MOSFET, 500V, 2.5A TO-220
• Manufacturer: Vishay

Specifications of IRF820A

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRF820A

IRF820A, SiHF820A
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91057_12c
Vary t
required I
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
300
250
200
150
100
Fig. 12a - Unclamped Inductive Test Circuit
p
Fig. 12b - Unclamped Inductive Waveforms
50
0
to obtain
V
I
25
AS
AS
DS
Starting T
R
10 V
G
V
50
DS
t
p
J
, Junction Temperature (°C)
75
t
p
I
AS
D.U.T
0.01 Ω
L
100
V
DS
Top
Bottom
125
This datasheet is subject to change without notice.
V
DD
1.1 A
1.6 A
2.5 A
+
-
I
V
D
150
DD
A
91057_12d
700
650
600
550
Fig. 13a - Typical Drain-to-Source Voltage vs.
10 V
0.0
Fig. 12d - Basic Gate Charge Waveform
12 V
V
Fig. 13b - Gate Charge Test Circuit
V
G
GS
Same type as D.U.T.
Current regulator
Q
0.5
0.2 µF
GS
I
AV
Avalanche Current
, Avalanche Current (A)
Current sampling resistors
3 mA
50 kΩ
Charge
1.0
Q
0.3 µF
Q
GD
G
I
G
S11-0507-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
1.5
Document Number: 91057
D.U.T.
I
D
2.0
+
-
V
DS
2.5