IRF820A Vishay, IRF820A Datasheet - Page 5

• Manufacturer Part Number: IRF820A
• Description: N CHANNEL MOSFET, 500V, 2.5A TO-220
• Manufacturer: Vishay

Specifications of IRF820A

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRF820A

Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91054_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
91057_11
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
10
0.1
10
-2
1
10
-5
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Single Pulse
(Thermal Response)
10
100
-4
This datasheet is subject to change without notice.
125
t
1
, Rectangular Pulse Duration (s)
150
10
-3
10
-2
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
Notes:
1. Duty Factor, D = t
2. Peak T
V
GS
t
d(on)
0.1
V
IRF820A, SiHF820A
DS
t
r
j
= P
P
DM
DM
x Z
D.U.T.
t
1
1
www.vishay.com/doc?91000
thJC
/t
Vishay Siliconix
R
2
t
D
+ T
2
t
d(off)
C
1
t
f
+
-
www.vishay.com
V
DD
5