IRF820A Vishay, IRF820A Datasheet - Page 3

• Manufacturer Part Number: IRF820A
• Description: N CHANNEL MOSFET, 500V, 2.5A TO-220
• Manufacturer: Vishay

Specifications of IRF820A

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRF820A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91057_01
91057_02
Fig. 2 - Typical Output Characteristics, T
10
Fig. 1 - Typical Output Characteristics, T
0.1
0.1
10
10
-2
1
1
0.1
1
Bottom
Top
Top
Bottom
V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS
DS ,
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
1
10
20 µs Pulse Width
T
20 µs Pulse Width
T
10
J
J
=
=
25 °C
150 °C
4.5 V
4.5 V
This datasheet is subject to change without notice.
C
C
= 150 °C
= 25 °C
10
10
2
2
91057_04
91057_03
Fig. 4 - Normalized On-Resistance vs. Temperature
10
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
-2
1
- 60 - 40 - 20 0
4.0
I
V
Fig. 3 - Typical Transfer Characteristics
D
T
GS
J
= 2.5 A
= 150
= 10 V
V
T
5.0
GS ,
J ,
°
T
C
Junction Temperature (°C)
J
Gate-to-Source Voltage (V)
IRF820A, SiHF820A
= 25
20 40 60 80 100 120 140 160
6.0
°
C
www.vishay.com/doc?91000
7.0
Vishay Siliconix
20 µs Pulse Width
V
DS
=
50 V
8.0
www.vishay.com
9.0
3