STQ1NK60ZR-AP STMicroelectronics, STQ1NK60ZR-AP Datasheet - Page 8

• Manufacturer Part Number: STQ1NK60ZR-AP
• Description: MOSFET N CH 600V 0.3A TO92
• Manufacturer: STMicroelectronics

Specifications of STQ1NK60ZR-AP

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 400mA
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 13ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Maximum avalanche energy vs
vs temperature
characteristics
temperature
STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
Figure 19. Max Id Current vs Tc
temperature
VDSS
vs temperature