STQ1NK60ZR-AP STMicroelectronics, STQ1NK60ZR-AP Datasheet - Page 4

• Manufacturer Part Number: STQ1NK60ZR-AP
• Description: MOSFET N CH 600V 0.3A TO92
• Manufacturer: STMicroelectronics

Specifications of STQ1NK60ZR-AP

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 400mA
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 13ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
fs
Q
oss
oss eq.
rss
iss
gs
gd
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
V
V
V
V
V
(see Figure 21)
I
V
V
V
V
V
D
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
= 1mA, V
=0, V
=480V, I
= V
= 10V, I
=15V, I
=25V, f=1 MHz, V
=10V
= Max rating,
= Max rating @125°C
= ±20V
Test conditions
Test conditions
GS
DS
, I
D
D
GS
D
=0V to 480V
D
= 0.4A
= 0.4A
= 50µA
= 0.8A
= 0
GS
=0
Min.
Min.
600
3
Typ.
3.75
Typ.
17.6
13
0.5
2.8
4.9
2.7
94
11
1
oss
Max.
Max.
±
4.5
when V
50
15
6.9
10
1
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S