PSMN9R0-30LL NXP Semiconductors, PSMN9R0-30LL Datasheet - Page 10

• Manufacturer Part Number: PSMN9R0-30LL
• Description: MOSFET,N CH,30V,21A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-30LL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN9R0-30LL
Product data sheet
Fig 15. Input, output and reverse transfer capacitances
Fig 17. Gate-source voltage as a function of gate charge; typical values
(pF)
C
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
-1
1
V
(V)
GS
10
10
8
6
4
2
0
0
V
All information provided in this document is subject to legal disclaimers.
DS
003aae134
C
(V)
C
C
oss
iss
rss
5
6V
24V
10
2
Rev. 04 — 7 July 2010
10
15
Fig 16. Source (diode forward) current as a function of
N-channel QFN3333 30 V 9 mΩ logic level MOSFET
V
DS
= 15V
(A)
I
S
20
30
20
10
0
003aae137
source-drain (diode forward) voltage; typical
values
Q
0
G
(nC)
25
0.3
T
j
= 150 °C
PSMN9R0-30LL
0.6
T
0.9
j
© NXP B.V. 2010. All rights reserved.
= 25 °C
003aae138
V
SD
(V)
1.2
10 of 15