PSMN3R5-30LL NXP Semiconductors, PSMN3R5-30LL Datasheet - Page 9

• Manufacturer Part Number: PSMN3R5-30LL
• Description: MOSFET,N CH,30V,40A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R5-30LL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN3R5-30LL
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
10
6 V
15 V
20
V
(A)
I
DS
S
50
40
30
20
10
30
0
= 24 V
0
All information provided in this document is subject to legal disclaimers.
Q
003a a e 149
G
(nC)
40
Rev. 3 — 18 August 2010
0.3
T
j
= 150 °C
0.6
N-channel QFN3333 30 V 3.6 mΩ logic level MOSFET
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
T
j
0.9
4
3
2
10
= 25 °C
as a function of drain-source voltage; typical
values
−1
003aae150
V
SD
(V)
1.2
1
PSMN3R5-30LL
10
C
C
C
V
© NXP B.V. 2010. All rights reserved.
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oss
rss
DS
003a a e 146
(V)
10
2
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