PSMN023-80LS NXP Semiconductors, PSMN023-80LS Datasheet - Page 8

• Manufacturer Part Number: PSMN023-80LS
• Description: MOSFET,N CH,80V,34A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN023-80LS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN023-80LS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
(mΩ)
R
V
DS on
(V)
GS
80
60
40
20
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
T
T
0
0
j
j
= 25°C; t
= 25°C; I
4.4
10
V
4.5
DS
p
D
= 300 µs
= 30 A
= 16 V
10
4.6
20
4.8
30
64 V
20
V
GS
6.0
Q
40 V
(V) = 5.0
G
40
All information provided in this document is subject to legal disclaimers.
003a a e 504
003aae505
(nC)
6.5
I
D
(A)
5.5
8.0
50
30
Rev. 2 — 18 August 2010
N-channel QFN3333 80 V 23 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
V
−1
GS
V
V
V
GS(pl)
DS
GS(th)
GS
= 0 V; f = 1 MHz
Q
GS1
1
I
Q
D
GS
PSMN023-80LS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
003aae506
(V)
C
C
C
rss
oss
iss
10
2
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