PSMN023-80LS NXP Semiconductors, PSMN023-80LS Datasheet
PSMN023-80LS
Specifications of PSMN023-80LS
Related parts for PSMN023-80LS
PSMN023-80LS Summary of contents
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... PSMN023-80LS N-channel QFN3333 mΩ standard level MOSFET Rev. 2 — 18 August 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. ...
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... R GS Simplified outline Transparent top view SOT873-1 (QFN3333) Description plastic thermal enhanced very thin small outline package; no leads; 8 terminals All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS Min = Figure 14 °C; - j(init) ≤ sup Graphic symbol ...
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... Ω; unclamped V sup GS 003aae497 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of solder point temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS Min - = 20 kΩ -20 Figure 1 - Figure ° -55 - ° ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN023-80LS Product data sheet N-channel QFN3333 mΩ standard level MOSFET / Conditions see −4 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS =10 μ 100 μ 100 (V) DS Min Typ Figure 4 - ...
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... D DS see Figure MHz °C; see Figure 1.33 Ω 4.7 Ω R G(ext) = 4.7 Ω G(ext) = 1.33 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS Min Typ Max 4 100 - 10 100 - 39.9 48 ...
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... A; dI /dt = 100 A/µ 003aae500 (A) D Fig 6. 003aae502 R DSon (mΩ ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS Min Typ - 0. 6.0 8.0 7.0 6 0 25° 300 µ Output characteristics: drain current as a function of drain-source voltage; typical values ...
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... N-channel QFN3333 mΩ standard level MOSFET 003aae507 (V) GS Fig 10. Gate-source threshold voltage as a function of 003aae487 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS 5 V GS(th) (V) 4 max 3 typ min - junction temperature 3 a 2.4 1 ...
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... V (V) = 5.0 GS 5.5 6.5 8.0 6 (A) D Fig 14. Gate charge waveform definitions 003aae505 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS GS(pl) V GS(th GS1 GS2 G(tot (pF) 3 ...
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... Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN023-80LS Product data sheet N-channel QFN3333 mΩ standard level MOSFET ( 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS 003aae508 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...
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... 2.4 3.4 1.80 0.55 0.52 0.65 1.95 2.2 3.2 1.58 0.45 0.35 REFERENCES JEDEC JEITA - - - - - - All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS detail 0.1 0.05 0.1 0.1 EUROPEAN PROJECTION SOT873 ISSUE DATE 10-03-10 19-04-10 © NXP B.V. 2010. All rights reserved. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN023-80LS v.2 20100818 • Modifications: Status changed from objective to product. PSMN023-80LS v.1 20100624 PSMN023-80LS Product data sheet N-channel QFN3333 mΩ standard level MOSFET Data sheet status Change notice Product data sheet ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 18 August 2010 Document identifier: PSMN023-80LS ...