PSMN017-80PS NXP Semiconductors, PSMN017-80PS Datasheet - Page 7

• Manufacturer Part Number: PSMN017-80PS
• Description: MOSFET,N CH,80V,50A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-80PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 13.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN017-80PS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
2500
2000
1500
1000
(pF)
(A)
I
500
C
D
60
50
40
30
20
10
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Input and reverse transfer capacitances as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
0.5
10
3
8
6.5
…continued
6
1
6
5.5
V
1.5
9
GS
C
C
All information provided in this document is subject to legal disclaimers.
(V) = 4.5
rss
iss
003aad458
V
003aad464
V
DS
GS
(V)
(V)
5
Rev. 02 — 1 November 2010
Conditions
I
see
I
V
S
S
12
2
GS
= 10 A; V
= 40 A; dI
Figure 17
= 0 V; V
N-channel 80 V 17 mΩ standard level MOSFET in TO220
GS
S
DS
/dt = 100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 40 V
(S)
g
(A)
I
fs
D
50
40
30
20
10
70
60
50
40
30
20
10
0
0
j
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
= 25 °C;
0
0
10
2
PSMN017-80PS
20
T
j
= 175 °C
Min
-
-
-
30
4
Typ
0.79
41
55
© NXP B.V. 2010. All rights reserved.
V
40
T
GS
003aad465
003aad460
j
= 25 °C
I
(V)
D
Max
1.2
-
-
(A)
50
6
Unit
V
ns
nC
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