PSMN017-80PS NXP Semiconductors, PSMN017-80PS Datasheet - Page 3

• Manufacturer Part Number: PSMN017-80PS
• Description: MOSFET,N CH,80V,50A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-80PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 13.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN017-80PS
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
(A)
I
50
D
40
30
20
10
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
All information provided in this document is subject to legal disclaimers.
T
003aad364
mb
(°C)
Conditions
T
T
V
V
pulsed; t
T
T
pulsed; t
V
V
j
j
GS
GS
mb
mb
GS
sup
Rev. 02 — 1 November 2010
200
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 80 V; R
p
p
≤ 10 µs; T
≤ 10 µs; T
N-channel 80 V 17 mΩ standard level MOSFET in TO220
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
Fig 2.
= 100 °C; see
= 25 °C; see
= 50 Ω; unclamped
Figure 2
= 25 °C; I
mb
mb
P
(%)
der
120
80
40
= 25 °C; see
= 25 °C
0
function of mounting base temperature
Normalized total power dissipation as a
GS
0
D
= 20 kΩ
= 50 A;
Figure 1
Figure 1
50
Figure 3
PSMN017-80PS
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
175
175
Max
80
80
20
35
50
200
103
50
200
55
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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