PSMN013-30LL NXP Semiconductors, PSMN013-30LL Datasheet - Page 9

• Manufacturer Part Number: PSMN013-30LL
• Description: MOSFET,N CH,30V,21A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30LL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN013-30LL
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Normalized drain-source on-state resistance
10
10
10
10
10
10
(A)
a
I
1.5
0.5
D
-1
-2
-3
-4
-5
-6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
0
min
1
60
typ
2
120
V
All information provided in this document is subject to legal disclaimers.
GS
003aab271
T
max
j
(V)
( ° C)
03aa27
180
3
Rev. 04 — 7 July 2010
N-channel QFN3333 30 V 13 mΩ logic level MOSFET
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
50
40
30
20
10
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
5
GS1
I
Q
D
GS
PSMN013-30LL
Q
GS2
10
Q
V
G(tot)
GS
(V) = 2.8
Q
GD
15
© NXP B.V. 2010. All rights reserved.
003aaa508
003aae192
I
D
3.0
(A)
3.5
4.0
4.5
10
20
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