PSMN013-30LL NXP Semiconductors, PSMN013-30LL Datasheet - Page 10

• Manufacturer Part Number: PSMN013-30LL
• Description: MOSFET,N CH,30V,21A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30LL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN013-30LL
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
7.5
2.5
10
5
0
charge; typical values
0
6V
24V
5
10
(A)
V
I
S
DS
25
20
15
10
5
0
= 15V
Q
0
All information provided in this document is subject to legal disclaimers.
G
003aae194
(nC)
15
0.3
Rev. 04 — 7 July 2010
T
j
= 150 °C
0.6
N-channel QFN3333 30 V 13 mΩ logic level MOSFET
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
0.9
3
2
10
as a function of drain-source voltage; typical
values
T
j
-1
= 25 °C
V
003aae195
SD
(V)
1.2
1
PSMN013-30LL
10
C
C
C
V
© NXP B.V. 2010. All rights reserved.
iss
oss
rss
DS
003aae191
(V)
10
2
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