PSMN013-30LL NXP Semiconductors, PSMN013-30LL Datasheet - Page 7

• Manufacturer Part Number: PSMN013-30LL
• Description: MOSFET,N CH,30V,21A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30LL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
PSMN013-30LL
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
(S)
g
fs
40
30
20
10
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
5
10
…continued
15
Conditions
V
R
I
see
I
V
20
All information provided in this document is subject to legal disclaimers.
S
S
DS
DS
G(ext)
003aae189
= 5 A; V
= 8 A; dI
I
D
Figure 17
= 15 V; R
= 15 V
(A)
= 4.7 Ω; T
25
Rev. 04 — 7 July 2010
GS
S
/dt = 100 A/µs; V
= 0 V; T
L
= 2 Ω; V
j
= 25 °C
N-channel QFN3333 30 V 13 mΩ logic level MOSFET
j
Fig 6.
= 25 °C;
GS
(A)
I
= 10 V;
D
20
15
10
GS
5
0
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
0
= 0 V;
1
T
PSMN013-30LL
j
= 150 °C
Min
-
-
-
-
-
-
-
2
Typ
13
9
15
5.1
0.85
20.7
10.6
T
j
= 25 °C
3
© NXP B.V. 2010. All rights reserved.
V
003aae188
GS
Max
-
-
-
-
1.2
-
-
(V)
4
Unit
ns
ns
ns
ns
V
ns
nC
7 of 15