PSMN011-80YS NXP Semiconductors, PSMN011-80YS Datasheet - Page 10

• Manufacturer Part Number: PSMN011-80YS
• Description: MOSFET,N CH,80V,67A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-80YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN011-80YS
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
S
100
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 October 2010
0.3
T
j
= 175 °C
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
0.6
0.9
T
j
= 25 °C
003aad334
V
SD
(V)
1.2
PSMN011-80YS
© NXP B.V. 2010. All rights reserved.
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