BUK663R5-55C NXP Semiconductors, BUK663R5-55C Datasheet - Page 5

• Manufacturer Part Number: BUK663R5-55C
• Description: MOSFET,N CH,55V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK663R5-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 2.86mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK663R5-55C
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10 −1
10
10
−1
−2
−3
10
1
3
2
1
10 −
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
−6
Thermal characteristics
1
δ = 0.5
0.05
0.02
single shot
0.1
0.2
Parameter
thermal resistance from
junction to mounting base
10
−5
Limit R
DSon
All information provided in this document is subject to legal disclaimers.
= V
10
1
−4
DS
/ I
Rev. 2 — 23 December 2010
D
Conditions
see
Figure 5
10
−3
N-channel TrenchMOS intermediate level FET
DC
10
10
−2
BUK663R5-55C
Min
-
10
V
P
DS
−1
(V)
t
Typ
-
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s )
t
100 ms
003aae386
003aae387
p
10 ms
100 μs
δ =
=10 μs
1 ms
Max
0.57
t
T
t
p
10
1
2
Unit
K/W
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