BUK663R5-55C NXP Semiconductors, BUK663R5-55C Datasheet - Page 4

• Manufacturer Part Number: BUK663R5-55C
• Description: MOSFET,N CH,55V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK663R5-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 2.86mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK663R5-55C
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
200
160
120
80
40
0
mounting base temperature
Continuous drain current as a function of
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
0
50
(1)
100
I
(A)
AL
10
10
10
10
150
−1
3
2
1
10
−3
All information provided in this document is subject to legal disclaimers.
T
003aac796
mb
(°C)
Rev. 2 — 23 December 2010
200
10
−2
10
−1
Fig 2.
P
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
t
AL
003aae402
(3)
(1)
(2)
(ms)
10
50
BUK663R5-55C
100
150
© NXP B.V. 2010. All rights reserved.
T
mb
03aa16
(°C)
200
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