BUK6610-75C NXP Semiconductors, BUK6610-75C Datasheet - Page 7

• Manufacturer Part Number: BUK6610-75C
• Description: MOSFET,N CH,75V,54A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK6610-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 8.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK6610-75C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
120
100
I
fs
150
D
120
80
60
40
20
90
60
30
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
T
j
= 175 °C
2
40
…continued
60
T
j
= 25 °C
4
80
V
All information provided in this document is subject to legal disclaimers.
GS
003aae812
003aae411
I
D
(V)
(A)
Rev. 02 — 14 October 2010
100
Conditions
I
see
I
V
6
S
S
GS
= 25 A; V
= 20 A; dI
Figure 15
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
R
(mΩ)
DSon
(A)
160
I
120
D
80
40
40
30
20
10
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
j
= 25 °C;
V
GS
5
1
(V) = 10
BUK6610-75C
Min
-
-
-
N-channel TrenchMOS FET
10
2
6.0
5.0
Typ
0.8
50.5
105
15
3
© NXP B.V. 2010. All rights reserved.
V
003aae814
003aae811
V
GS
DS
Max
1.2
-
-
(V)
(V)
4.5
4.0
3.8
3.6
3.4
3.2
20
4
Unit
V
ns
nC
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