BUK6610-75C NXP Semiconductors, BUK6610-75C Datasheet

MOSFET,N CH,75V,54A,SOT404

BUK6610-75C

Manufacturer Part Number
BUK6610-75C
Description
MOSFET,N CH,75V,54A,SOT404
Manufacturer
NXP Semiconductors
Datasheet
1.BUK6610-75C118.pdf (15 pages)

Specifications of BUK6610-75C

Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
8.6mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
D2-PAK
Rohs Compliant
Yes
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK6610-75C
N-channel TrenchMOS FET
Rev. 02 — 14 October 2010
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
12 V Automotive systems
Electric and electro-hydraulic power
steering
EngineMotors, lamps and solenoid
control management
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
V
T
Conditions
T
see
V
T
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure 1
= 25 °C; see
= 10 V; T
= 10 V; I
j
D
≤ 175 °C
mb
= 25 A;
Figure 11
= 25 °C;
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
Figure 2
Min
-
-
-
-
Product data sheet
Typ
-
-
-
8.6
Max Unit
75
78
158
10
V
A
W
mΩ

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BUK6610-75C Summary of contents

Page 1

... BUK6610-75C N-channel TrenchMOS FET Rev. 02 — 14 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... see GS see Figure 14 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK6610-75C N-channel TrenchMOS FET Min Typ ≤ sup = Figure 13; Graphic symbol ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK6610-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 Figure [3] Figure 311 - 158 -55 175 -55 ...

Page 4

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK6610-75C N-channel TrenchMOS FET 0 50 100 150 T 003aae408 =10 μ 100 μ 100 (V) DS © ...

Page 5

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6610-75C Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK6610-75C N-channel TrenchMOS FET Min Typ Max - - 0.95 003aae407 δ = ...

Page 6

... Ω R G(ext) from upper edge of drain mounting base to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK6610-75C N-channel TrenchMOS FET Min Typ Max = 25 ° -55 ° 1.8 2.3 2 ...

Page 7

... A/µ 003aae411 60 80 100 I (A) D Fig 6. 003aae812 = 25 ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK6610-75C N-channel TrenchMOS FET Min Typ = 25 ° 50.5 - 105 160 5 (A) 120 Output characteristics: drain current as a function of drain-source voltage ...

Page 8

... I (A) D Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK6610-75C N-channel TrenchMOS FET 003aad806 min typ max 003aad804 0 60 120 © NXP B.V. 2010. All rights reserved. ...

Page 9

... 100 Q (nC) G Fig 14. Gate charge waveform definitions 200 I S (A) 150 100 = 175 ° ° 0.5 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK6610-75C N-channel TrenchMOS FET GS(pl) V GS(th GS1 GS2 G(tot) 003aae416 1 (V) SD © NXP B.V. 2010. All rights reserved. ...

Page 10

... Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK6610-75C Product data sheet (pF All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK6610-75C N-channel TrenchMOS FET 003aae412 C iss C oss C rss (V) DS © NXP B.V. 2010. All rights reserved ...

Page 11

... H D max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK6610-75C N-channel TrenchMOS FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6610-75C v.2 20101014 • Modifications: Status changed from objective to product. • Various changes to content. BUK6610-75C v.1 20090323 BUK6610-75C Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...

Page 13

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK6610-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK6610-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 October 2010 Document identifier: BUK6610-75C ...

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