BUK6507-75C NXP Semiconductors, BUK6507-75C Datasheet - Page 8

MOSFET,N CH,75V,72A,SOT78

BUK6507-75C

Manufacturer Part Number
BUK6507-75C
Description
MOSFET,N CH,75V,72A,SOT78
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK6507-75C

Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
6.5mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
TO-220AB
Rohs Compliant
Yes
NXP Semiconductors
BUK6507-75C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSon
I
D
10
10
10
10
10
10
20
16
12
-1
-2
-3
-4
-5
-6
8
4
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
T
0
0
j
= 25°C; t
V
GS
40
1
p
(V) = 3.8
= 300 µs
min
80
2
typ
4
max
120
3
All information provided in this document is subject to legal disclaimers.
003aad806
V
003aae550
I
D
GS
(A)
(V)
10
4.5
5
160
Rev. 02 — 4 October 2010
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
4
3
2
1
0
3
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
max @1mA
min @2.5mA
typ @1mA
BUK6507-75C
N-channel TrenchMOS FET
60
60
120
120
© NXP B.V. 2010. All rights reserved.
003aae542
T
003aad804
T
j
j
(°C)
(°C)
180
180
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