BUK6507-75C,127 NXP Semiconductors, BUK6507-75C,127 Datasheet

BUK6507-75C,127

Manufacturer Part Number

BUK6507-75C,127

Description

MOSFET N-CH TRENCH SOT78A

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Datasheet

1.BUK6507-75C127.pdf (14 pages)

Specifications of BUK6507-75C,127

Input Capacitance (ciss) @ Vds

7600pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

7.6 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

100A

Vgs(th) (max) @ Id

2.8V @ 1mA

Gate Charge (qg) @ Vgs

123nC @ 10V

Power - Max

204W

Mounting Type

Through Hole

Package / Case

TO-220-3

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

7 mOhms

Drain-source Breakdown Voltage

75 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Power Dissipation

204 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free by exemption / RoHS compliant by exemption

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

Table 1.

Symbol

Static characteristics

tot

DSon

BUK6507-75C

N-channel TrenchMOS FET

Rev. 02 — 4 October 2010

AEC Q101 compliant

Suitable for intermediate level gate

drive sources

12 V and 24 V Automotive systems

Electric and electro-hydraulic power

steering

Motors, lamps and solenoid control

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

drain-source on-state

resistance

Conditions

see

≥ 25 °C; T

= 25 °C; see

Figure 1

Figure 2

= 25 °C;

= 10 V; T

= 10 V; I

≤ 175 °C

Suitable for thermally demanding

environments due to 175 °C rating

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power

switching

= 25 A;

Figure 11

= 25 °C;

[1]

Product data sheet

Min Typ Max Unit

6.5

100 A

204 W

7.6

mΩ

Related parts for BUK6507-75C,127

BUK6507-75C,127 Summary of contents

Page 1

... BUK6507-75C N-channel TrenchMOS FET Rev. 02 — 4 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET Min Typ Max Unit ≤ sup = 50 Ω °C; unclamped = 60 V; ...

Page 3

... Figure °C mb ≤ 10 µs; pulsed ° ≤ 100 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 [3] Figure 1 - 100 [3] Figure 406 - ...

Page 4

... Product data sheet 003aae543 P der (%) 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6507-75C Product data sheet Conditions see Figure 4 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET Min Typ Max - - 0.74 003aae545 t P δ = ...

Page 6

... R G(ext) from drain lead 6 mm from package to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET Min Typ Max = 25 ° -55 ° 1.8 2 ...

Page 7

... Figure /dt = -100 A/µ 003aae546 (A) D Fig 6. 003aae548 R (mΩ) = 175 ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET Min Typ = 25 ° 129 160 (A) 120 300 μ 25° Output characteristics: drain current as a function of drain-source voltage ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 003aae550 4 4 120 160 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET 4 GS(th) (V) 3 max @1mA 2 typ @1mA min @2.5mA 1 0 -60 0 ...

Page 9

... BUK6507-75C Product data sheet 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae552 (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET 100 T = 25°C; I ...

Page 10

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6507-75C v.2 20101004 • Modifications: Status changed from objective to product. • Various changes to content. BUK6507-75C v.1 20100921 BUK6507-75C Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 October 2010 Document identifier: BUK6507-75C ...

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