BUK6226-75C NXP Semiconductors, BUK6226-75C Datasheet - Page 7

• Manufacturer Part Number: BUK6226-75C
• Description: MOSFET,N CH,75V,23A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6226-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 24.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK6226-75C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
(A)
I
I
D
D
80
60
40
20
50
40
30
20
10
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
2
T
j
= 175 °C
2
V
…continued
GS
(V) = 8.0
3
4
T
j
= 25 °C
V
All information provided in this document is subject to legal disclaimers.
4
GS
003aae862
003aae861
V
(V)
DS
(V)
3.6
5.0
3.8
3.3
5.5
4.5
4.0
Rev. 01 — 4 October 2010
5
6
Conditions
I
see
I
V
S
S
GS
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
Fig 6.
Fig 8.
DS
/dt = -100 A/µs;
= 0 V; T
(mΩ)
R
= 25 V
(S)
g
DSon
fs
50
40
30
20
10
80
60
40
20
0
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
j
= 25 °C;
10
5
20
BUK6226-75C
Min
-
-
-
N-channel TrenchMOS FET
10
30
Typ
0.8
42
74
15
© NXP B.V. 2010. All rights reserved.
40
V
003aae863
003aae867
GS
I
D
Max
1.2
-
-
(V)
(A)
50
20
Unit
V
ns
nC
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