BUK6226-75C,118 NXP Semiconductors, BUK6226-75C,118 Datasheet
BUK6226-75C,118
Specifications of BUK6226-75C,118
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BUK6226-75C,118 Summary of contents
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... BUK6226-75C N-channel TrenchMOS FET Rev. 01 — 4 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET Graphic symbol mbb076 Version SOT428 © NXP B.V. 2010. All rights reserved ...
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... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 Figure Figure 130 - 80 -55 175 -55 175 ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK6226-75C Product data sheet 003aae859 150 200 T (°C) mb Fig All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6226-75C Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET Min Typ Max - - 1.87 003aae795 t P δ = ...
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... Ω R G(ext) from upper edge of drain mounting base to centre of die ; T j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET Min Typ Max = 25 ° -55 ° °C; 1.8 2 ...
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... V (V) DS Fig 6. 003aae862 R (mΩ ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET Min Typ = 25 ° Forward transconductance as a function of drain current; typical values 80 ...
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... Fig 10. Sub-threshold drain current as a function of 003aae865 4.5 5.0 a 2.5 1.5 8.0 0 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET -1 -2 min typ max - gate-source voltage ...
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... Fig 14. Gate-source voltage as a function of gate 003aae864 (A) C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET 10 GS (V) 7.5 V 14V charge; typical values 50 I ...
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... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET min 10.4 2.95 2.285 4.57 0.5 9.6 2 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6226-75C v.1 20101004 BUK6226-75C Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 4 October 2010 BUK6226-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 October 2010 Document identifier: BUK6226-75C ...