BUK6211-75C NXP Semiconductors, BUK6211-75C Datasheet - Page 9

• Manufacturer Part Number: BUK6211-75C
• Description: MOSFET,N CH,75V,52A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6211-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 9.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6211-75C
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
20
14V
40
60
V
(A)
I
DS
S
200
150
100
= 60V
50
0
80
0
All information provided in this document is subject to legal disclaimers.
003aae414
Q
G
(nC)
Rev. 02 — 28 September 2010
100
T
0.5
j
= 175 °C
1
Fig 14. Gate charge waveform definitions
T
j
= 25 °C
1.5
V
V
V
V
GS(pl)
003aae416
V
DS
GS(th)
GS
SD
(V)
2
Q
GS1
I
Q
D
GS
Q
GS2
BUK6211-75C
N-channel TrenchMOS FET
Q
G(tot)
Q
GD
© NXP B.V. 2010. All rights reserved.
003aaa508
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