BUK6211-75C NXP Semiconductors, BUK6211-75C Datasheet - Page 8

• Manufacturer Part Number: BUK6211-75C
• Description: MOSFET,N CH,75V,52A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6211-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 9.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6211-75C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
V
(m Ω )
DSon
GS(th)
(V)
40
30
20
10
4
3
2
1
0
0
-60
junction temperature
of drain current; typical values
Gate-source threshold voltage as a function of
T
0
j
= 25°C; t
3.2
25
3.4
0
p
= 300 µs
50
3.6
max
min
typ
60
V
GS
3.8
75
(V) = 5, 6, 10
120
100
4
All information provided in this document is subject to legal disclaimers.
003aae887
003aad805
4.5
T
I
j
D
(°C)
(A)
Rev. 02 — 28 September 2010
125
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
D
10
10
10
10
10
a
2.5
1.5
0.5
-1
-2
-3
-4
-5
-6
3
2
1
0
-60
gate-source voltage
factor as a function of junction temperature
0
1
0
min
BUK6211-75C
N-channel TrenchMOS FET
60
2
typ
max
120
3
© NXP B.V. 2010. All rights reserved.
003aad806
V
003aad804
T
GS
j
(°C)
(V)
180
4
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