2N7002BK NXP Semiconductors, 2N7002BK Datasheet - Page 7

• Manufacturer Part Number: 2N7002BK
• Description: MOSFET,N CH,60V,0.35A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of 2N7002BK

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-23
• Rohs Compliant: Yes

NXP Semiconductors
2N7002BK
Product data sheet
Fig 6.
Fig 8.
R
DSon
(Ω)
(A)
I
(1) V
(2) V
(3) V
(4) V
(5) V
D
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
6.0
4.0
2.0
0.0
0.0
0.0
T
function of drain-source voltage; typical
values
T
of drain current; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
V
amb
amb
GS
GS
GS
GS
GS
GS
= 3.25 V
= 3.5 V
= 4 V
= 5 V
= 10 V
= 4.0 V
= 25 °C
= 25 °C
0.2
1.0
0.4
(1)
3.5 V
2.0
0.6
(2)
3.25 V
2.75 V
3.0 V
2.5 V
3.0
0.8
All information provided in this document is subject to legal disclaimers.
V
017aaa039
017aaa041
DS
I
(3)
D
(V)
(A)
(4)
(5)
4.0
1.0
Rev. 1 — 17 June 2010
Fig 7.
Fig 9.
R
DSon
(Ω)
(A)
I
10
10
10
10
(1) minimum values
(2) typical values
(3) maximum values
(1) T
(2) T
D
6.0
4.0
2.0
0.0
−3
−4
−5
−6
0.0
0.0
T
Sub-threshold drain current as a function of
gate-source voltage
I
Drain-source on-state resistance as a function
of gate-source voltage; typical values
D
amb
amb
amb
= 500 mA
60 V, 350 mA N-channel Trench MOSFET
= 25 °C; V
= 150 °C
= 25 °C
2.0
1.0
DS
(1)
4.0
= 5 V
(2)
6.0
2.0
2N7002BK
(3)
(1)
(2)
V
© NXP B.V. 2010. All rights reserved.
8.0
GS
017aaa040
017aaa042
V
(V)
GS
(V)
10.0
3.0
7 of 16