BSP315P Infineon Technologies, BSP315P Datasheet - Page 2

• Manufacturer Part Number: BSP315P
• Description: P CH MOSFET, -60V, 1.17A, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP315P

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.17A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.5V
• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 800.0 mOhm
• Rds (on) (max) (@4.5v): 1,400.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
Drain-Source on-state resistance
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
Rev.1.3
GS
DS
DS
GS
GS
GS
= -160 µA
= -60 V, V
= -60 V, V
= 0 V, I
= -20 V, V
= -4.5 V, I
= -10 V, I
2
cooling area
D
= -250 µA
D
D
GS
GS
DS
= -1.17 A
= -0.89 A
= 0 V, T
= 0 V, T
= 0 V
1)
GS
j
j
= 25 °C
= 125 °C
= V
j
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
min.
-60
-1
-
-
-
-
-
-
-
-
Values
Values
typ.
-1.5
-0.1
typ.
-10
-10
0.8
0.5
-
-
-
-
max.
max.
-100
-100
115
BSP 315 P
1.4
0.8
25
70
-2
-1
2005-11-23
-
Unit
V
µA
nA
Unit
K/W
K/W