SUD50N04-8M8P-GE3 Vishay, SUD50N04-8M8P-GE3 Datasheet - Page 6

• Manufacturer Part Number: SUD50N04-8M8P-GE3
• Description: N CHANNEL MOSFET, 40V, 50A, TO-252
• Manufacturer: Vishay

Specifications of SUD50N04-8M8P-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 10.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0088 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68647.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
0.1
0.2
Duty Cycle = 0.5
0.2
0.1
0.02
Duty Cycle = 0.5
Single Pulse
Single Pulse
0.02
10
-3
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
1
A
S10-0109-Rev. B, 18-Jan-10
= P
t
2
Document Number: 68647
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 80 °C/W
1000
1
0