SUD50N04-8M8P-GE3 Vishay, SUD50N04-8M8P-GE3 Datasheet - Page 6
![N CHANNEL MOSFET, 40V, 50A, TO-252](/photos/19/8/190868/4243264_sml.jpg)
SUD50N04-8M8P-GE3
Manufacturer Part Number
SUD50N04-8M8P-GE3
Description
N CHANNEL MOSFET, 40V, 50A, TO-252
Manufacturer
Vishay
Datasheet
1.SUD50N04-8M8P-4GE3.pdf
(7 pages)
Specifications of SUD50N04-8M8P-GE3
Transistor Polarity
N Channel
Continuous Drain Current Id
50A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
10.5mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Configuration
Single
Resistance Drain-source Rds (on)
0.0088 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
3.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-252AA
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68647.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
0.1
0.2
Duty Cycle = 0.5
0.2
0.1
0.02
Duty Cycle = 0.5
Single Pulse
Single Pulse
0.02
10
-3
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
1
A
S10-0109-Rev. B, 18-Jan-10
= P
t
2
Document Number: 68647
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 80 °C/W
1000
1
0