SUD50N04-8M8P-GE3 Vishay, SUD50N04-8M8P-GE3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N04-8M8P-GE3
• Description: N CHANNEL MOSFET, 40V, 50A, TO-252
• Manufacturer: Vishay

Specifications of SUD50N04-8M8P-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 10.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0088 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
V
3200
2400
1600
GS
800
100
1.5
1.2
0.9
0.6
0.3
0.0
80
60
40
20
0
= 10 V thru 5 V
0
0.0
0
0
C
rss
T
C
0.5
1
= 125 °C
V
V
V
T
DS
GS
Transfer Characteristics
DS
5
C
Output Characteristics
= 25 °C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
C
Capacitance
oss
iss
1.0
2
10
V
GS
= 4 V
1.5
3
T
C
= - 55 °C
V
15
GS
2.0
4
= 3 V
20
2.5
5
0.012
0.010
0.008
0.006
0.004
100
10
80
60
40
20
8
6
4
2
0
0
0
0
0
I
D
= 20 A
On-Resistance vs. Drain Current
20
1
V
10
GS
Transfer Characteristics
T
Q
C
g
T
- Gate-to-Source Voltage (V)
V
= 125 °C
V
I
- Total Gate Charge (nC)
C
D
SUD50N04-8m8P
GS
GS
= 25 °C
- Drain Current (A)
40
Gate Charge
V
= 10 V
2
= 4.5 V
DS
= 10 V
20
Vishay Siliconix
60
V
3
DS
= 30 V
T
V
C
www.vishay.com
DS
30
= - 55 °C
80
= 20 V
4
100
40
5
3