SI4425BDY-T1-GE3 Vishay, SI4425BDY-T1-GE3 Datasheet - Page 5
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SI4425BDY-T1-GE3
Manufacturer Part Number
SI4425BDY-T1-GE3
Description
P CH MOSFET
Manufacturer
Vishay
Datasheet
1.SI4425BDY-T1-E3.pdf
(6 pages)
Specifications of SI4425BDY-T1-GE3
Transistor Polarity
P Channel
Continuous Drain Current Id
-11.4A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-400mV
Power Dissipation Pd
2.5W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4425BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72000.
Document Number: 72000
S09-0767-Rev. E, 04-May-09
0.01
0.1
2
1
10
-4
0.05
0.2
0.02
0.1
Duty Cycle = 0.5
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si4425BDY
www.vishay.com
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