SI4425BDY-T1-E3 Vishay, SI4425BDY-T1-E3 Datasheet

MOSFET P-CH 30V 8.8A 8-SOIC

SI4425BDY-T1-E3

Manufacturer Part Number
SI4425BDY-T1-E3
Description
MOSFET P-CH 30V 8.8A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4425BDY-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 11.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.012 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.8 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-11.4A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-400mV
Power Dissipation Pd
2.5W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4425BDY-T1-E3TR

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20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72000
S09-0767-Rev. E, 04-May-09
Ordering Information: Si4425BDY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 30
(V)
G
S
S
S
Si4425BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.019 at V
0.012 at V
1
2
3
4
R
DS(on)
Top View
J
a
SO-8
= 150 °C)
GS
a
GS
= - 4.5 V
(Ω)
= - 10 V
P-Channel 30-V (D-S) MOSFET
a
8
7
6
5
D
D
D
D
a
A
I
- 11.4
= 25 °C, unless otherwise noted
- 9.1
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Advanced High Cell Density Process
• Compliant to RoHS Directive 2002/95/EC
• Load Switches
Symbol
Symbol
T
R
R
J
Definition
- Notebook PCs
- Desktop PCs
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
®
Power MOSFET
Typical
- 11.4
G
- 9.1
- 2.1
10 s
2.5
1.6
40
70
15
P-Channel MOSFET
- 55 to 150
± 20
- 30
- 50
S
D
Steady State
Maximum
- 8.8
- 7.0
- 1.3
1.5
0.9
50
85
18
Vishay Siliconix
Si4425BDY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4425BDY-T1-E3 Summary of contents

Page 1

... 4 SO Top View Ordering Information: Si4425BDY-T1-E3 (Lead (Pb)-free) Si4425BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4425BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72000 S09-0767-Rev. E, 04-May-09 5000 4000 3000 2000 1000 0.05 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 Si4425BDY Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si4425BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0.6 I 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µ 100 125 150 100 Limited by R DS(on D(on) ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72000. Document Number: 72000 S09-0767-Rev. E, 04-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4425BDY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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