SI4425BDY-T1-GE3 Vishay, SI4425BDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4425BDY-T1-GE3
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SI4425BDY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -11.4A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -400mV
• Power Dissipation Pd: 2.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4425BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
0.2
Duty Cycle = 0.5
0.1
0.05
0.02
0
Threshold Voltage
T
Single Pulse
J
25
- Temperature (°C)
10
-3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.01
100
0.1
10
100
1
0.1
10
-2
Limited by R
* V
Limited
I
125
D(on)
GS
Single Pulse
T
A
> minimum V
= 25 °C
V
150
DS
Square Wave Pulse Duration (s)
DS(on)*
- Drain-to-Source Voltage (V)
Safe Operating Area
1
10
-1
GS
BVDSS Limited
at which R
10
DS(on)
30
25
20
15
10
5
0
1
10
I
DM
is specified
-2
Limited
Single Pulse Power, Junction-to-Ambient
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10
100
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
Time (s)
T
A
t
S09-0767-Rev. E, 04-May-09
1
= P
t
Document Number: 72000
2
DM
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 70 °C/W
100
600
600