IRFB9N60APBF Vishay, IRFB9N60APBF Datasheet - Page 5

• Manufacturer Part Number: IRFB9N60APBF
• Description: N CHANNEL MOSFET, 600V, 9.2A TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFB9N60APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 750mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 170000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.75Ohm
• Drain-source On-volt: 600V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB9N60APBF

Document Number: 91103
S11-0514-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 9 - Maximum Drain Current vs. Case Temperature
10.0
8.0
6.0
4.0
2.0
0.0
25
0.01
0.1
0.00001
1
D = 0.50
50
T , Case Temperature ( C)
C
0.20
0.10
0.05
0.02
0.01
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
(THERMAL RESPONSE)
100
0.0001
SINGLE PULSE
125
°
This datasheet is subject to change without notice.
t , Rectangular Pulse Duration (s)
1
150
0.001
0.01
90 %
10 %
V
V
IRFB9N60A, SiHFB9N60A
DS
GS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
1. Duty factor D = t / t
2. Peak T = P
Notes:
G
10V
V
t
GS
d(on)
J
V
DS
t
r
DM
x Z
1
0.1
thJC
P
2
D.U.T.
DM
www.vishay.com/doc?91000
+ T
Vishay Siliconix
R
C
D
t
1
t
d(off)
t
2
t
f
www.vishay.com
+
-
V DD
1
5