IRFB9N60APBF Vishay, IRFB9N60APBF Datasheet

N CHANNEL MOSFET, 600V, 9.2A TO-220

IRFB9N60APBF

Manufacturer Part Number
IRFB9N60APBF
Description
N CHANNEL MOSFET, 600V, 9.2A TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRFB9N60APBF

Transistor Polarity
N Channel
Continuous Drain Current Id
9.2A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
750mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
9.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
170W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.75 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9.2 A
Power Dissipation
170000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.75Ohm
Drain-source On-volt
600V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFB9N60APBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB9N60APBF
Manufacturer:
STM
Quantity:
5 208
Part Number:
IRFB9N60APBF
Manufacturer:
IR
Quantity:
20 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91103
S11-0514-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 9.2 A, dI/dt ≤ 50 A/μs, V
(Ω)
TO-220AB
J
= 25 °C, L = 6.8 mH, R
a
D
c
a
a
DD
b
V
≤ V
GS
g
= 10 V
G
DS
= 25 Ω, I
, T
N-Channel MOSFET
J
≤ 150 °C.
Single
600
49
13
20
AS
This datasheet is subject to change without notice.
D
S
= 9.2 A (see fig. 12).
C
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.75
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220AB
IRFB9N60APbF
SiHFB9N60A-E3
IRFB9N60A
SiHFB9N60A
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
APPLICABLE OFF LINE SMPS TOPOLOGIES
• Active Clamped Forward
• Main Switch
Requirement
Ruggedness
and Current
SYMBOL
IRFB9N60A, SiHFB9N60A
T
dV/dt
J
V
V
E
E
I
I
P
, T
DM
I
AR
DS
GS
AR
D
AS
D
stg
g
Results in Simple Drive
- 55 to + 150
LIMIT
300
± 30
600
290
170
9.2
5.8
1.3
9.2
5.0
1.1
37
17
10
www.vishay.com/doc?91000
d
Vishay Siliconix
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRFB9N60APBF Summary of contents

Page 1

... Compliant to RoHS Directive 2002/95/EC D APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching APPLICABLE OFF LINE SMPS TOPOLOGIES • Active Clamped Forward S • Main Switch TO-220AB IRFB9N60APbF SiHFB9N60A-E3 IRFB9N60A SiHFB9N60A = 25 °C, unless otherwise noted) C SYMBOL ° ...

Page 2

... IRFB9N60A, SiHFB9N60A Vishay Siliconix THERMAL RESISTANCE PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Fig Typical Transfer Characteristics 3 2.5 2.0 1.5 1.0 0.5 ° 0.0 -60 -40 -20 100 Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. Vishay Siliconix ° ° 50V DS 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10 Gate-to-Source Voltage ( ...

Page 4

... IRFB9N60A, SiHFB9N60A Vishay Siliconix 100000 1MHz iss rss oss ds gd 10000 C iss 1000 C oss 100 10 C rss 100 V , Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 9. 480V 400V 300V 120V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...

Page 5

... Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit 125 150 10 % ° Fig. 10b - Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. Vishay Siliconix D.U. 10V d(on) r d(off) f ...

Page 6

... IRFB9N60A, SiHFB9N60A Vishay Siliconix D.U. 0. Fig. 12a - Unclamped Inductive Test Circuit 600 500 400 300 200 100 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... for logic level device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91103. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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