IRFB9N60APBF Vishay, IRFB9N60APBF Datasheet - Page 2

• Manufacturer Part Number: IRFB9N60APBF
• Description: N CHANNEL MOSFET, 600V, 9.2A TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFB9N60APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 750mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 170000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.75Ohm
• Drain-source On-volt: 600V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB9N60APBF

IRFB9N60A, SiHFB9N60A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
effective is a fixed capacitance that gives the same charging time as C
J
= 25 °C, unless otherwise noted)
a
SYMBOL
This datasheet is subject to change without notice.
SYMBOL
ΔV
C
R
V
R
oss
R
R
C
C
t
t
I
I
V
DS(on)
C
C
Q
V
GS(th)
Q
GSS
d(on)
d(off)
I
Q
DSS
g
Q
t
DS
SM
t
thCS
thJC
I
thJA
t
t
on
DS
oss
oss
SD
iss
rss
S
rr
fs
gs
gd
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
R
GS
GS
GS
V
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 25 °C, I
g
DS
T
= 9.1 Ω, R
J
Reference to 25 °C, I
= 10 V
= 0 V
= 10 V
= 25 °C, I
= 480 V, V
TYP.
V
V
V
0.50
V
TEST CONDITIONS
f = 1.0 MHz, see fig. 5
V
DS
DS
DD
GS
-
-
DS
F
= 600 V, V
= V
= 300 V, I
= 0 V, I
= 50 V, I
V
= 9.2 A, dI/dt = 100 A/μs
V
GS
V
D
oss
DS
V
V
S
GS
GS
GS
I
DS
= 35.5 Ω, see fig. 10
DS
D
= 9.2 A, V
= ± 30 V
V
while V
, I
= 25 V,
= 9.2 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
= 480 V , f = 1.0 MHz
DS
= 1.0 V , f = 1.0 MHz
D
D
D
= 250 μA
= 250 μA
= 0 V to 480 V
D
I
GS
D
= 5.5 A
= 9.2 A
= 5.5 A
DS
D
= 0 V
GS
J
= 1 mA
is rising from 0 % to 80 % V
G
= 125 °C
DS
= 0 V
= 400 V
b
MAX.
0.75
b
D
S
b
62
-
b
b
MIN.
600
2.0
5.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0514-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91103
TYP.
1400
1957
660
180
530
7.1
3.0
49
96
13
25
30
22
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
.
UNIT
°C/W
MAX.
± 100
0.75
250
800
4.0
9.2
1.5
4.4
S
25
49
13
20
37
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
mV/°C
D
UNIT
)
nA
μA
nC
μC
pF
ns
ns
Ω
V
V
S
A
V