IRFB18N50KPBF Vishay, IRFB18N50KPBF Datasheet - Page 4

• Manufacturer Part Number: IRFB18N50KPBF
• Description: N CHANNEL MOSFET, 500V, 17A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFB18N50KPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2830pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6.4 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.29Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB18N50KPBF

Document Number: 91100
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Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
V
T = 150 C
SD
J
V DS , Drain-to-Source Voltage (V)
0.5
,Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss
C rss
C oss = C ds + C gd
°
10
= C gs + C gd , C ds
= C gd
0.8
Crss
Ciss
Coss
T = 25 C
f = 1 MHZ
J
100
1.1
V
°
GS
SHORTED
= 0 V
1.4
1000
1000
100
0.1
Fig 8. Maximum Safe Operating Area
20
16
12
10
8
4
0
1
0
10
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
17A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
30
Q , Total Gate Charge (nC)
°
°
G
, Drain-to-Source Voltage (V)
100
V
V
V
DS
DS
DS
60
BY R
= 400V
= 250V
= 100V
DS(on)
10us
100us
1ms
10ms
90
1000
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120
10000
150
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